MITSUBISHI TRANSISTOR MODULES
QM50TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
t
s
REVERSE BIAS SAFE OPERATING AREA
160
COLLECTOR CURRENT I
C
(A)
t
s
, t
f
(µs)
140
120
100
80
60
40
20
0
0
T
j
=125°C
SWITCHING TIME
10
1
7
5
4
3
2
t
f
V
CC
=600V
I
B1
=1A
10
0
I
C
=50A
7
T
j
=25°C
5
T
j
=125°C
4
3
10
–1
2 3 4 5 7 10
0
I
B2
=–1A
2 3 4 5 7 10
1
200 400 600 800 1000 1200 1400 1600
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
10
2
7
5
3
2
100
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
200µ
S
D
90
C
100µ
S
1m
S
DERATING FACTOR (%)
50µ
S
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
10
1
7
5 T
C
=25°C
3 NON–REPETITIVE
2
10
0
7
5
3
2
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
CASE TEMPERATURE
T
C
(°C)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 45 710
1
2 3 4 5 7
0.5
0.4
Z
th (j–c)
(°C/ W)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.3
T
j
=25°C
T
j
=125°C
0.2
0.1
0
10
–3
2 3 4 5 710
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
10
0
0.4
0.8
1.2
1.6
2.0
2.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
