ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
RATING
17
6
100
40
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=896-902/ 935-941MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.5V, P
in
=25-70mW,
P
out
=1 to 25W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=20W (V
GG
control),
Load VSWR=8:1
V
DD
=12.5V, V
GG
=5V, P
in
=50mW
P
out
=20W(V
GG
control)
V
DD
=12.5V
P
in
=50mW
CONDITIONS
MIN
TYP
MAX
UNIT
MHz
W
%
896-902/ 935-941
20
25
-30
3:1
1
No parasitic oscillation
No degradation or
destroy
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change with out notice.
RA20H8994M
MITSUBISHI ELECTRIC
2/9
25 April 2003
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
