ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
P
out
2
nd
, 3 HARMONICS versus FREQUENCY
-20
100
TOTAL EFFICIENCY
η
T(%
)
-30
-40
-50
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
OUTPUT POWER P
out
(W)
50
INPUT VSWR
ρ
in
(-)
40
30
20
10
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
80
60
40
20
HARMONICS (dBc)
3
rd
-60
-70
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
ρ
in
0
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
12
10
DRAIN CURRENT
I
DD
(A)
8
OUTPUT POWER P
out
(dBm)
60
Gp
12
P
out
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
I
DD
10
8
6
4
DRAIN CURRENT
12
10
8
6
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
4
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
I
DD
6
4
2
0
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
2
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
50
40
30
I
DD
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
12
OUTPUT POWER P
out
(dBm)
10
8
6
4
DRAIN CURRENT
I
DD
(A)
60
50
40
30
I
DD
Gp
P
out
POWER GAIN Gp(dB)
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
POWER GAIN Gp(dB)
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
2
0
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
18
OUTPUT POWER P
out
(W)
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
18
16
14
12
10
8
6
4
2
0
RA30H4452M
MITSUBISHI ELECTRIC
3/9
I
DD
(A)
2 Dec 2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
