MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD30HVF1
DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5
7.6+/-0.3
4-C1
RoHS Compliance,
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
2
3
R1.6
14.0+/-0.4
6.6+/-0.3
FEATURES
1
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
2.3+/-0.3
2.8+/-0.3
0.10
3.0+/-0.4
5.1+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD30HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
junction to case
RATINGS
30
+/-20
75
2.5
7
175
-40 to +175
2.0
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz ,V
DD
=12.5V
Pin=1.0W, Idq=0.5A
V
DD
=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
1.3
30
55
LIMITS
TYP
MAX.
-
130
-
1
1.8
2.3
35
-
60
-
No destroy
UNIT
uA
uA
V
W
%
-
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
Note : Above parameters , ratings , limits and conditions are subject to change.
RD30HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
