MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200HE-66S
High Voltage Diode Module
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)
R
th(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to case
Case to Fin,
λ
grease
= 1W/m·K
D
(c-f)
=100µm
Min
—
—
Limits
Typ
—
15.0
Max
20.0
—
Unit
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
m
Item
Mounting torque
Mass
Conditions
M8: Main terminals screw
M6: Mounting screw
—
Min
6.67
2.84
—
Limits
Typ
—
—
0.66
Max
13.0
6.0
—
Unit
N·m
N·m
kg
PERFORMANCE CURVES
FORWARD CHARACTERISTICS
(TYPICAL)
2500
1.4
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
V
R
= 1650V, T
j
= 125°C
L
S
= 100nH
1.2
2000
REVERSE RECOVERY ENERGY E
rec
(J/p)
T
j
= 25°C
T
j
= 125°C
0
1
2
3
4
5
6
FORWARD CURRENT I
F
(A)
1.0
1500
0.8
1000
0.6
0.4
500
0.2
0
0
0
500
1000
1500
2000
2500
FORWARD VOLTAGE V
F
(V)
FORWARD CURRENT I
F
(A)
High Voltage Diode Module
May 2009
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
