MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
•
Extremely Low vF
•
Low Stored Charge, Majority Carrier Conduction
•
Low Power Loss/High Efficiency
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Weight: 0.4 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
•
Shipped in plastic bags, 1000 per bag.
•
Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
•
Polarity: Cathode Indicated by Polarity Band
•
Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
(VR(equiv)
≤
0.2 VR(dc), TL = 90°C,
R
θJA
= 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
Ambient Temperature (Rated VR(dc), PF(AV) = 0, R
θJA
= 80°C/W)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
1N5817
20
1N5817
1N5818
1N5819
1N5817 and 1N5819 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
20, 30 and 40 VOLTS
CASE 59–04
1N5818
30
1N5819
40
Unit
V
24
14
36
21
1.0
48
28
V
V
A
TA
IFSM
85
80
25 (for one cycle)
75
°C
A
TJ, Tstg
TJ(pk)
–65 to +125
150
°C
°C
THERMAL CHARACTERISTICS
(2)
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
θJA
Max
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TL = 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
(TL = 25°C)
(TL = 100°C)
Symbol
vF
1N5817
0.32
0.45
0.75
1.0
10
1N5818
0.33
0.55
0.875
1.0
10
1N5819
0.34
0.6
0.9
1.0
10
Unit
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
IR
mA
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 3
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1
MOTOROLA [ MOTOROLA, INC ]
