MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5820/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
•
Extremely Low vF
•
Low Power Loss/High Efficiency
•
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
•
Shipped in plastic bags, 5,000 per bag
•
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
•
Polarity: Cathode indicated by Polarity Band
•
Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
VR(equiv)
0.2 VR(dc), TL = 95°C
(R
θJA
= 28°C/W, P.C. Board Mounting, see Note 2)
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
1N5820
20
1N5821
30
™
Data Sheet
1N5820
1N5821
1N5822
1N5820 and 1N5822 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
1N5822
40
Unit
V
24
14
36
21
3.0
48
28
V
V
A
v
Ambient Temperature
Rated VR(dc), PF(AV) = 0
R
θJA
= 28°C/W
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
TA
90
85
80
°C
IFSM
80 (for one cycle)
A
TJ, Tstg
TJ(pk)
*
65 to +125
150
°C
°C
*THERMAL CHARACTERISTICS
(Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 2
Symbol
R
θJA
Max
28
Unit
°C/W
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1
MOTOROLA [ MOTOROLA, INC ]
