2N3715 2N3716
200
hFE , CURRENT GAIN
TJ = 175°C
150
hFE
I –
+
IBC
)
ICBO
ICBO
100
25°C
VCE = 2 V
50
– 40°C
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
IC, COLLECTOR CURRENT (AMPS)
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Current Gain Variations
f
τ
, CURRENT GAIN — BANDWIDTH PRODUCT (mc)
8
6
4
2
VCE = 6 V
0
0.1
0.2
0.3
0.5
0.7
1.0
IC, COLLECTOR CURRENT (AMPS)
2.0
3.0
5.0
Figure 11. Current Gain — Bandwidth Product versus Collector Current
SAFE OPERATING AREAS
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
DC to 5 ms
500
µs
1 ms
≤
50
µs
250
µs
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
DC to 5 ms
500
µs
1 ms
≤
50
µs
250
µs
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
10
20
30
40
50
60
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70
0
10
80
20
30
40
50
60
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
90
Figure 12. 2N3715
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not go into secondary break-
down. Collector load lines for specific circuits must fall within
the applicable Safe Area to avoid causing a collector–emitter
Figure 13. 2N3716
short. (Duty cycle of the excursions make no significant
change in these safe areas.) To insure operation below the
maximum TJ, the power–temperature derating curve must be
observed for both steady state and pulse power conditions.
3–16
Motorola Bipolar Power Transistor Device Data
MOTOROLA [ MOTOROLA, INC ]
