MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4036/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N4036
2N4037
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Base Current
Collector Current — Continuous
Continuous Power Dissipation
at or Below TC = 25°C
Linear Derating Factor
Continuous Power Dissipation
at or Below TA = 25°C
Linear Derating Factor
Operating and Storage Junction
Temperature Range
Lead Temperature
1/16″ from Case for 10 Seconds
Symbol
VCEO
VCBO
VEBO
IB
IC
PD
5.0
28.6
PD
1.0
5.72
TJ, Tstg
TL
1.0
5.72
Watts
mW/°C
°C
°C
5.0
28.6
Watts
mW/°C
2N4036
– 65
– 90
– 7.0
– 0.5
– 1.0
2N4037
– 40
– 60
– 7.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
3
2
1
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
– 65 to +200
230
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
q
JC
2N4036
35
2N4037
35
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage(1)
(IC = – 100 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = – 0.1 mAdc)
Collector Cutoff Current
(VCE = – 85 Vdc, VEB = – 1.5 Vdc)
(VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C)
Collector Cutoff Current
(VCB = – 90 Vdc, IE = 0)
(VCB = – 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = – 7.0 Vdc, IC = 0)
(VEB = – 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
VCEO(sus)
2N4036
2N4037
V(BR)CBO
2N4037
ICEX
2N4036
2N4037
ICBO
2N4036
2N4037
IEBO
2N4036
2N4037
—
—
– 10
– 1.0
—
—
– 1.0
– 0.25
µAdc
—
—
– 0.1
– 100
µAdc
mAdc
– 65
– 40
– 60
—
—
—
Vdc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
