MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
2N5550
2N5551*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140
160
6.0
600
625
5.0
1.5
12
– 55 to +150
160
180
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
µAdc,
IE = 0 )
Emitter – Base Breakdown Voltage
(IE = 10
µAdc,
IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
2N5550
2N5551
V(BR)CBO
2N5550
2N5551
V(BR)EBO
ICBO
2N5550
2N5551
2N5550
2N5551
IEBO
—
—
—
—
—
100
50
100
50
50
160
180
6.0
—
—
—
140
160
—
—
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
