MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N7002LT1/D
TMOS FET Transistor
N–Channel Enhancement
3 DRAIN
1
GATE
2N7002LT1
Motorola Preferred Device
3
2 SOURCE
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current — Continuous TC = 25°C(1)
Drain Current — Continuous
TC = 100°C(1)
Drain Current
— Pulsed(2)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp
≤
50
µs)
Symbol
VDSS
VDGR
ID
ID
IDM
VGS
VGSM
Value
60
60
±
115
±
75
±
800
±
20
±
40
Unit
Vdc
Vdc
mAdc
1
2
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(3) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(4) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R
θJA
PD
Max
225
1.8
556
300
2.4
R
θJA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
2N7002LT1 = 702
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10
µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
1.
2.
3.
4.
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
60
—
—
—
—
—
—
—
—
—
—
1.0
500
100
–100
Vdc
µAdc
nAdc
nAdc
The Power Dissipation of the package may result in a lower continuous drain current.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
FR–5 = 1.0 x 0.75 x 0.062 in.
Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
©
Motorola, Inc. 1997
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
MOTOROLA [ MOTOROLA, INC ]
