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4N32 参数 Datasheet PDF下载

4N32图片预览
型号: 4N32
PDF下载: 下载PDF文件 查看货源
内容描述: 标准通孔CASE 730A -04 [STANDARD THRU HOLE CASE 730A-04]
分类和应用: 光电输出元件
文件页数/大小: 6 页 / 290 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 4N29/D
GlobalOptoisolator™
6-Pin DIP Optoisolators
Darlington Output
The 4N29/A, 4N30, 4N31, 4N32
(1)
and 4N33
(1)
devices consist of a gallium
arsenide infrared emitting diode optically coupled to a monolithic silicon
photodarlington detector.
This series is designed for use in applications requiring high collector output
currents at lower input currents.
Higher Sensitivity to Low Input Drive Current
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix “V” must be included at end of part number. VDE 0884 is a test option.
Applications
Low Power Logic Circuits
Interfacing and coupling systems of different potentials and impedances
Telecommunications Equipment
Portable Electronics
Solid State Relays
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
Derate above 25°C
OUTPUT DETECTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage(2)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range(3)
Storage Temperature Range(3)
Soldering Temperature (10 sec, 1/16″ from case)
VISO
PD
TA
Tstg
TL
7500
250
2.94
– 55 to +100
– 55 to +150
260
Vac(pk)
mW
mW/°C
°C
°C
°C
VCEO
VECO
VCBO
IC
PD
30
5
30
150
150
1.76
Volts
Volts
Volts
mA
mW
mW/°C
VR
IF
PD
3
60
120
1.41
Volts
mA
mW
mW/°C
Symbol
Value
Unit
4N29
4N29A
4N30 *
4N31
4N32 *
4N33 *
[CTR = 100% Min]
[CTR = 50% Min]
[CTR = 500% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
1
2
3
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
6
5
4
1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6–Pin devices
exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30.
2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and
2 are common, and Pins 4, 5 and 6 are common.
3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 4
Motorola Optoelectronics Device Data
©
Motorola, Inc. 1995
1