BD437 BD441
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
1.6
IC = 10 A
100 mA
1.0 A
3.0 A
1.2
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
Figure 1. Collector Saturation Region
hFE, CURRENT GAIN (NORMALIZED)
200
180
160
140
120
100
80
60
40
20
0
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (AMP)
1
2
3
5
BD433, 435, 437
BD439, 441
Figure 2. Current Gain
2.0
TJ = 25°C
1.6
VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
10
4.0
TJ = 150°C
1.0
0.5
dc
5 ms
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD437
BD441
0.6
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
0.1
1.0
2.0
5.0
10
20
50
100
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. “On” Voltage
Figure 4. Active Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MOTOROLA [ MOTOROLA, INC ]
