MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
•
Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Blocking Voltage to 800 Volts
•
Different Leadform Configurations,
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information
C122( )1
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open)
Repetitive Peak Reverse Voltage
C122F1
C122A1
C122B1
C122D1
C122M1
C122N1
Peak Non-repetitive Reverse Voltage(1)
C122F1
C122A1
C122B1
C122D1
C122M1
C122N1
Forward Current RMS
(All Conduction Angles)
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
TC
Symbol
VDRM
VRRM
Value
50
100
200
400
600
800
Volts
75
200
300
500
700
800
IT(RMS)
ITSM
I2t
8
90
34
Amps
Amps
A2s
Unit
Volts
VRSM
p
75°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
36
Motorola Thyristor Device Data
MOTOROLA [ MOTOROLA, INC ]
