MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by J112/D
JFET Chopper Transistor
N–Channel — Depletion
1 DRAIN
3
GATE
J112
2 SOURCE
MAXIMUM RATINGS
Rating
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Lead Temperature
Operating and Storage Junction
Temperature Range
Symbol
VDG
VGS
IG
PD
TL
TJ, Tstg
Value
– 35
– 35
50
350
2.8
300
– 65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
1
2
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0
µAdc)
Gate Reverse Current
(VGS = –15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0
µAdc)
Drain–Cutoff Current
(VDS = 5.0 Vdc, VGS = –10 Vdc)
V(BR)GSS
IGSS
VGS(off)
ID(off)
35
—
– 1.0
—
—
– 1.0
– 5.0
1.0
Vdc
nAdc
Vdc
nAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc)
Static Drain–Source On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate On–Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Source Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300
µs,
Duty Cycle = 3.0%.
IDSS
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
5.0
—
—
—
50
28
mAdc
Ω
pF
—
—
5.0
5.0
pF
pF
(Replaces J111/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
