MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MAC320/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes
(MAC320A Series)
MAC320
Series
MAC320A
Series
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4, MAC320A4
MAC320-6, MAC320A6
MAC320-8, MAC320A8
MAC320-10, MAC320A10
Peak Gate Voltage
On-State Current RMS (TC = +75°C)
(Full Cycle, Sine Wave, 50 to 60 Hz)
Peak Surge Current (One Full Cycle, 60 Hz, T C = +75°C)
preceded and followed by rated current
Peak Gate Power (T C = +75°C, Pulse Width = 2
µs)
Average Gate Power (T C = +75°C, t = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
VGM
IT(RMS)
ITSM
PGM
PG(AV)
IGM
TJ
Tstg
Symbol
VDRM
200
400
600
800
10
20
150
20
0.5
2
–40 to +125
–40 to +150
Volts
Amp
Amp
Watts
Watt
Amp
°C
°C
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.8
Unit
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MOTOROLA [ MOTOROLA, INC ]
