MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR264-4/D
Thyristors
MCR264 4
thru
MCR264 10
SCRs
40 AMPERES RMS
200 thru 800 VOLTS
Silicon Controlled Rectifiers
. . . designed for back-to-back SCR output devices for solid state relays or applications
requiring high surge operation.
•
Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
•
400 Amperes Surge Capability
•
Blocking Voltage to 800 Volts
G
A
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR264-4
MCR264-6
MCR264-8
MCR264-10
Forward Current (TC = 80°C)
(All Conduction Angles)
Peak Non-repetitive Surge Current – 8.3 ms
(1/2 Cycle, Sine Wave)
1.5 ms
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300
µs,
120 PPS)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM
VRRM
200
400
600
800
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
IGM
TJ
Tstg
40
25
400
450
20
0.5
2
–40 to +125
–40 to +150
Amps
Amps
Watts
Watt
Amps
°C
°C
Value
Unit
Volts
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
REV 1
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MOTOROLA [ MOTOROLA, INC ]
