MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHW2821/D
The RF Line
UHF Silicon FET Power
Amplifiers
Designed for 12.5 volt UHF power amplifier applications in industrial and
commercial FM equipment operating from 806 to 950 MHz.
•
Specified 12.5 Volt Characteristics:
RF Input Power:
≤
250 mW (MHW2821–1)
RF Input Power:
≤
300 mW (MHW2821–2)
RF Output Power: 20 W (MHW2821–1)
RF Output Power:
18 W (MHW2821–2)
•
LDMOS FET Technology
•
Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
•
50
Ω
Input/Output Impedance
•
Guaranteed Stability and Ruggedness
•
Cost Effective
MHW2821-1
MHW2821-2
–1: 20 W, 806 – 870 MHz
–2: 18 W, 890 – 950 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
MAXIMUM RATINGS
(Flange Temperature = 25°C)
Rating
DC Supply Voltages
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Symbol
Vbias,
VS2, VS3
Pin
Pout
TC
Tstg
Value
12.5
16
400
23
– 30 to +100
– 30 to +100
Unit
Vdc
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS
(VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = + 25°C, 50
Ω
system, unless otherwise noted)
Characteristic
Frequency Range
Input Power (Pout = 20 W) (1)
Input Power
(Pout = 18 W) (1)
Power Gain (Pout = 20 W) (1)
Power Gain
(Pout = 18 W) (1)
Efficiency (Rated Pout)
Harmonics (Rated Pout Reference) (1)
Input VSWR (Rated Pout) (1)
(1) Adjust Pin for specified Pout.
MHW2821–1
MHW2821–2
MHW2821–1
MHW2821–2
MHW2821–1
MHW2821–2
Symbol
BW
Pin
GP
η
2fo
3fo
VSWRin
Min
806
890
—
—
19
17.9
35
—
—
—
Max
870
950
250
300
—
—
—
– 40
– 45
3:1
Unit
MHz
mW
dB
%
dBc
dB
(continued)
MOTOROLA RF
©
Motorola, Inc. 1996
DEVICE DATA
MHW2821–1 MHW2821–2
1
MOTOROLA [ MOTOROLA, INC ]
