MJE13007 MJF13007
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Collector to Heatsink Capacitance, MJF13007
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
Fall Time
* Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200
µH
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tsv
tc
tfi
—
—
—
—
—
—
1.2
1.6
0.15
0.21
0.04
0.10
2.0
3.0
0.30
0.50
0.12
0.20
µs
µs
µs
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25
µs,
Duty Cycle
≤
1.0%)
td
tr
ts
tf
—
—
—
—
0.025
0.5
1.8
0.23
0.1
1.5
3.0
0.7
µs
fT
Cob
Cc–hs
4.0
—
—
14
80
3.0
—
—
—
MHz
pF
pF
hFE
8.0
5.0
VCE(sat)
—
—
—
—
VBE(sat)
—
—
—
—
—
—
1.2
1.6
1.5
—
—
—
—
1.0
2.0
3.0
3.0
Vdc
—
—
40
30
Vdc
—
IS/b
—
See Figure 6
See Figure 7
VCEO(sus)
ICES
—
—
IEBO
—
—
—
—
0.1
1.0
100
µAdc
400
—
—
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
2
Motorola Bipolar Power Transistor Device Data