MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MLP1N06CL/D
SMARTDISCRETES
™
Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET
These SMARTDISCRETES devices feature current limiting for short circuit
protection, an integral gate–to–source clamp for ESD protection and gate–to–drain
clamp for over–voltage protection. No additional gate series resistance is required
when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is
recommended to avoid a floating gate condition.
The internal gate–to–source and gate–to–drain clamps allow the devices to be
applied without use of external transient suppression components. The gate–to–
source clamp protects the MOSFET input from electrostatic gate voltage stresses
up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain
avalanche stresses that occur with inductive loads. This unique design provides
voltage clamping that is essentially independent of operating temperature.
The MLP1N06CL is fabricated using Motorola’s SMARTDISCRETES technolo-
gy which combines the advantages of a power MOSFET output device with
on–chip protective circuitry. This approach offers an economical means for
providing additional functions that protect a power MOSFET in harsh automotive
and industrial environments. SMARTDISCRETES devices are specified over a
wide temperature range from –50°C to 150°C.
•
Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress
Applied to the Device and Protects the Load From Overvoltage
•
Integrated ESD Diode Protection
•
Controlled Switching Minimizes RFI
•
Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current
— Single Pulse
Total Power Dissipation
Electrostatic Discharge Voltage (Human Body Model)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
ESD
TJ, Tstg
Value
Clamped
Clamped
±10
Self–limited
1.8
40
2.0
–50 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
kV
°C
MLP1N06CL
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
D
R1
G
R2
S
G
D
S
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes,
1/8″ from case
R
θJC
R
θJA
TL
3.12
62.5
260
°C/W
°C
CASE 221A–06, Style 5
TO–220AB
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
(Starting TJ = 25°C, ID = 2.0 A, L = 40 mH) (Figure 6)
SMARTDISCRETES is a trademark of Motorola, Inc.
EAS
80
mJ
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
©
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
