Freescale Semiconductor, Inc.
PERFORMANCE CHARACTERISTICS
Conditions
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
Symbol
|S21|2
—
—
GU max
—
—
NFMIN
—
—
GNF
—
—
NF50
Ω
|S21|2
(1
–
|S11|2)(1
–
|S22|2)
—
14
8.5
1.9
—
—
2.8
—
—
—
14
10
1.9
—
—
2.8
dB
1.5
2.1
—
—
—
—
1.5
2.1
—
—
dB
16
10
—
—
—
—
14.8
11.6
—
—
dB
14
8.0
—
—
—
—
14
10.8
—
—
dB
MMBR941LT1, T3
Min
Typ
Max
MRF947 Series
Min
Typ
Max
Unit
dB
ARCHIVE INFORMATION
Freescale Semiconductor, Inc...
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1
1
0.7
CCB , CAPACITANCE (pF)
0.5
hFE , DC CURRENT GAIN
300
200
100
70
50
30
20
10
1
2
3
5
7 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70
100
VCE = 6 V
0.3
f = 1 MHz
0.2
0.1
1
2
3
5
VCB, REVERSE VOLTAGE (V)
7
10
Figure 1. Collector–Base Capacitance
versus Voltage
12
f T, GAIN BANDWIDTH PRODUCT (GHz)
10
8
6
4
2
0
VCE = 6 V
f = 1 GHz
1
2
3
5
7
10
20
30
50 70
100
24
20
16
12
8
4
0
Figure 2. DC Current Gain versus
Collector Current
|S 21| 2, INSERTION GAIN (dB)
MMBR941LT1, T3
VCE = 6 V
f = 1 GHz
1
2
3
5
7
10
20
30
50 70
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MMBR941 MRF947 SERIES
3
ARCHIVE INFORMATION
MOTOROLA [ MOTOROLA, INC ]
