MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2369LT1/D
Switching Transistors
NPN Silicon
1
BASE
COLLECTOR
3
MMBT2369LT1
MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCES
VCBO
VEBO
IC
Value
15
40
40
4.5
200
2
EMITTER
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10
µAdc,
VBE = 0)
Collector – Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
15
V(BR)CES
40
V(BR)CBO
40
V(BR)EBO
4.5
ICBO
—
—
ICES
MMBT2369A
—
—
0.4
—
—
0.4
30
—
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Vdc
µAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
