MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA62/D
Darlington Transistors
PNP Silicon
COLLECTOR 3
MPSA62
thru
MPSA64 *
MPSA55, MPSA56
For Specifications,
See MPSA05, MPSA06 Data
BASE
2
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA62
–20
–20
–10
–500
625
5.0
1.5
12
– 55 to +150
MPSA63
MPSA64
–30
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100
µAdc,
VBE = 0)
Collector Cutoff Current
(VCB= –15 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
V(BR)CES
MPSA62
MPSA63, MPSA64
ICBO
MPSA62
MPSA63, MPSA64
IEBO
—
—
—
–100
–100
–100
nAdc
–20
–30
—
—
nAdc
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
MOTOROLA [ MOTOROLA, INC ]
