Freescale Semiconductor
Technical Data
MRF1518
Rev. 6, 3/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large- signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
•
RF Power Plastic Surface Mount Package
•
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
•
N Suffix Indicates Lead - Free Terminations
S
•
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
4
62.5
0.50
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
R
θJC
Rating
1
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
MOTOROLA [ MOTOROLA, INC ]
