MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1518/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1518T1 is designed for broadband commercial and industrial
applications with frequencies to 520 MHz. The high gain and broadband
performance of this device make it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal
G
Impedance Parameters
•
RF Power Plastic Surface Mount Package
•
Broadband UHF/VHF Demonstration Amplifier
S
Information Available Upon Request
•
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
40
±20
4
62.5
0.50
–65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula P
D
=
TJ – TC
R
θJC
Symbol
R
θJC
Max
2
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF1518T1
1
MOTOROLA [ MOTOROLA, INC ]
