MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF151G/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
•
Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
•
Low Thermal Resistance — 0.35°C/W
•
Ruggedness Tested at Rated Output Power
•
Nitride Passivated Die for Enhanced Reliability
MRF151G
300 W, 50 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
D
G
G
S
(FLANGE)
CASE 375–04, STYLE 2
D
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
125
125
±
40
40
500
2.85
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.35
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF151G
1
MOTOROLA [ MOTOROLA, INC ]
