MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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by MRF240/D
NPN Silicon
RF Power Transistors
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power
amplifier applications in commercial and industrial equipment.
•
High Common Emitter Power Gain
•
Specified 13.6 V, 160 MHz Performance:
Output Power = 40 Watts
Power Gain = 9.0 dB Min
Efficiency = 55% Min
•
Load Mismatch Capability at Rated Voltage and RF Drive
•
Silicon Nitride Passivated
•
Low Intermodulation Distortion, d3 = – 30 dB Typ
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
8.0
100
0.57
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
MRF240
40 W, 145 – 175 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 145A–09, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
1.75
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
16
36
4.0
—
—
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE
10
70
150
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
90
125
pF
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF240
1
MOTOROLA [ MOTOROLA, INC ]
