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MRF5P20180 参数 Datasheet PDF下载

MRF5P20180图片预览
型号: MRF5P20180
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF POWER FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 8 页 / 583 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5P20180/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W–CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
IM3 — –37.5 dBc
ACPR — –41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Qualified Up to a Maximum of 32 V
DD
Operation
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N–Channel Enhancement–Mode Lateral MOSFET
MRF5P20180R6
1990 MHz, 38 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
–0.5, +15
407
2.3
–65 to +150
200
120
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 80°C, 38 W CW
Symbol
R
θJC
Max
0.43
0.43
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P20180R6
1