Freescale Semiconductor, Inc.
PERFORMANCE CHARACTERISTICS
MMBR941LT1, T3
MRF947 Series
Conditions
Symbol
Unit
Min
Typ
Max
Min
Typ
Max
2
Insertion Gain
|S
|
dB
21
(V
CE
(V
CE
= 6.0 V, I = 15 mA, f = 1.0 GHz)
= 6.0 V, I = 15 mA, f = 2.0 GHz)
—
—
14
8.0
—
—
—
—
14
10.8
—
—
C
C
Maximum Unilateral Gain (1)
G
dB
dB
dB
dB
U max
(V
CE
(V
CE
= 6.0 V, I = 15 mA, f = 1.0 GHz)
—
—
16
10
—
—
—
—
14.8
11.6
—
—
C
= 6.0 V, I = 15 mA, f = 2.0 GHz)
C
Noise Figure — Minimum (Figure 9)
NF
MIN
(V
CE
(V
CE
= 6.0 V, I = 5.0 mA, f = 1.0 GHz)
—
—
1.5
2.1
—
—
—
—
1.5
2.1
—
—
C
= 6.0 V, I = 5.0 mA, f = 2.0 GHz)
C
Associated Gain at Minimum NF (Figure 9)
G
NF
(V
CE
(V
CE
= 6.0 V, I = 5.0 mA, f = 1.0 GHz)
—
—
14
8.5
—
—
—
—
14
10
—
—
C
= 6.0 V, I = 5.0 mA, f = 2.0 GHz)
C
Noise Figure — 50 ohm Source
(V = 6.0 V, I = 5.0 mA, f = 1.0 GHz)
NF
—
1.9
2.8
—
1.9
2.8
50 Ω
CE
NOTE:
C
2
|S
21
2
|
1. Maximum Unilateral Gain is GU
=
max
2
(1–|S | )(1–|S | )
11
22
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1
1
0.7
0.5
300
200
V
CE
= 6 V
100
0.3
0.2
70
f = 1 MHz
50
30
20
0.1
10
1
2
3
5
7
10
1
2
3
5
7
10
20 30
50 70 100
V , REVERSE VOLTAGE (V)
CB
I , COLLECTOR CURRENT (mA)
C
Figure 1. Collector–Base Capacitance
versus Voltage
Figure 2. DC Current Gain versus
Collector Current
12
10
8
24
20
16
12
8
6
MMBR941LT1, T3
4
V
= 6 V
V
= 6 V
CE
f = 1 GHz
CE
f = 1 GHz
2
0
4
0
1
2
3
5
7
10
20 30
50 70 100
1
2
3
5
7
10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
MMBR941 MRF947 SERIES
For More Information On This Product,
Go to: www.freescale.com
3
MOTOROLA [ MOTOROLA ]
