MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA42T1/D
High Voltage Transistor
Surface Mount
NPN Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA42T1
Motorola Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25°C(1)
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
300
300
6.0
500
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
1
2
3
4
CASE 318E-04, STYLE 1
TO-261AA
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Ambient(1)
Symbol
R
θJA
Max
83.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100
µAdc,
IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100
µAdc,
IC = 0)
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
300
6.0
—
—
—
—
—
0.1
0.1
Vdc
Vdc
Vdc
µAdc
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300
µs, δ
= 0.02.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal
©
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
MOTOROLA [ MOTOROLA, INC ]
