MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN0300L/D
TMOS FET Transistor
N–Channel — Enhancement
2
GATE
3 DRAIN
VN0300L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
60
60
±
20
±
40
200
500
350
2.8
—
Unit
V
V
Vdc
Vpk
mA
mA
mW
mW/°C
°C
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10
seconds
Symbol
R
θJA
TL
Max
312.5
300
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
(VDS = 0, ID = 10
µA)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125°C)
Gate–Body Leakage
(VDS = 0, VGS =
±30
V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current(1)
(VDS = VGS, ID = 1.0 mA)
Drain–Source On Resistance(1)
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
1. Pulse Test; Pulse Width < 300
m
s, Duty Cycle
V(BR)DSS
IDSS
—
—
IGSS
VGS(th)
ID(on)
rDS(on)
—
—
gfs
200
3.3
1.2
—
mS
—
0.8
1.0
10
500
±100
2.5
—
nA
V
A
Ω
30
—
V
µA
v
2.0%.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MOTOROLA [ MOTOROLA, INC ]
