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XC68HC912D60FU8 参数 Datasheet PDF下载

XC68HC912D60FU8图片预览
型号: XC68HC912D60FU8
PDF下载: 下载PDF文件 查看货源
内容描述: 超前信息 - 冯4.0 [Advance Information - Rev 4.0]
分类和应用: 微控制器和处理器外围集成电路时钟
文件页数/大小: 432 页 / 2948 K
品牌: MOTOROLA [ MOTOROLA ]
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Freescale Semiconductor, Inc.  
Flash Memory  
7.7.1 Bootstrap Operation Single-Chip Mode  
After reset, the CPU controlling the system will begin booting up by  
fetching the first program address from address $FFFE.  
7.7.2 Normal Operation  
The Flash EEPROM allows a byte or aligned word read/write in one bus  
cycle. Misaligned word read/write require an additional bus cycle. The  
Flash EEPROM array responds to read operations only. Write  
operations are ignored.  
7.7.3 Program/Erase Operation  
An unprogrammed Flash EEPROM bit has a logic state of one. A bit  
must be programmed to change its state from one to zero. Erasing a bit  
returns it to a logic one. The Flash EEPROM has a minimum  
program/erase life of 100 cycles. Programming or erasing the Flash  
EEPROM is accomplished by a series of control register writes and a  
write to a set of programming latches.  
Programming is restricted to a single byte or aligned word at a time as  
determined by internal signal SZ8 and ADDR[0]. The Flash EEPROM  
must first be completely erased prior to programming final data values.  
It is possible to program a location in the Flash EEPROM without erasing  
the entire array if the new value does not require the changing of bit  
values from zero to one.  
Read/Write Accesses During Program/Erase — During program or  
erase operations, read and write accesses may be different from those  
during normal operation and are affected by the state of the control bits  
in the Flash EEPROM control register (FEExxCTL). The next write to  
any valid address to the array after LAT is set will cause the address and  
data to be latched into the programming latches. Once the address and  
data are latched, write accesses to the array will be ignored while LAT is  
set. Writes to the control registers will occur normally.  
Program/Erase Verification — When programming or erasing the  
Flash EEPROM array, a special verification method is required to ensure  
Advance Information  
106  
68HC(9)12D60 — Rev 4.0  
Flash Memory  
MOTOROLA  
For More Information On This Product,  
Go to: www.freescale.com