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MSK4301EU 参数 Datasheet PDF下载

MSK4301EU图片预览
型号: MSK4301EU
PDF下载: 下载PDF文件 查看货源
内容描述: 29 AMP , 75V ,3相MOSFET采用智能集成型门驱动桥 [29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE]
分类和应用: 电动机控制栅极驱动局域网
文件页数/大小: 5 页 / 231 K
品牌: MSK [ M.S. KENNEDY CORPORATION ]
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ABSOLUTE MAXIMUM RATINGS
MMS
GroupA
4
Subgroup
1,2,3
1,2,3
1
1
-
-
MSK4301H/E
3
Min.
-
-
5.75
6.2
-
2.7
60
-1
70
-
-
-
Typ.
2.5
20
6.6
7.1
-
-
100
-
-
-
-
-
Max.
8
25
7.5
8.0
0.8
-
135
+1
-
25
0.020
0.013
MSK4301
2
Min.
-
-
5.75
6.2
-
2.7
60
-1
70
-
-
-
Typ.
2.5
20
6.6
7.1
-
-
100
-
-
-
-
-
Max.
8
25
7.5
8.0
0.8
-
135
+1
-
25
0.020
0.013
Units
Parameter
CONTROL SECTION
V
BIAS
Quiescent Current
V
BIAS
Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
1
1
1
1
1
1
1
1
1
Test Conditions
All Inputs Off
f=20KHz, 50% Duty Cycle
V
IN
=0V
V
IN
=5V
I
D
=25µA, All Inputs Off
V
DS
=70V
I
D
=29A
-
-
-
-
1
-
Drain-Source On Resistance (Each FET)
(Each FET, For Thermal Calculations Only)
V+=28V, R
L
=1Ω
I
D
=29A
SWR Resistor=
SWR Resistor=
SWR Resistor=
SWR Resistor=
SWR =
SWR=12K
1
1
I
SD
=29A
I
SD
=29A, di/dt=100A/µS
-
-
4
4
4
4
4
4
-
-
-
-
-
-
-
-
3.0
0.3
-
-
120
81
0.5
5
5
0.5
5.0
1.0
1.05
120
-
-
2
8
8
2
7.0
1.2
1.30
-
-
-
-
-
-
-
3.0
0.3
-
-
120
81
0.5
5
5
0.5
5.0
1.0
1.05
120
-
-
3
10
10
3
7.0
1.2
1.30
-
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
NOTES:
1
2
3
4
5
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
Subgroups 5 and 6 testing available upon request.
Subgroup 1, 4 T
A
= T
C
= +25°C
2, 5 T
A
= T
C
= +125°C
3, 6 T
A
= T
C
= -55°C
2
Rev. D 4/01
ELECTRICAL SPECIFICATIONS
-55°C to +125°C
-40°C to +85°C
+150°C
V+
V
BIAS
V
IND
I
OUT
I
PK
High Voltage Supply
75V
Bias Supply
16V
Logic Input Voltages
-0.3V to V
BIAS
+0.3V
Continuous Output Current
29A
Peak Output Current
41A
θ
JC
Thermal Resistance
T
ST
Storage Temperature Range
T
LD
Lead Temperature Range
(10 Seconds)
T
C
Case Operating Temperature
(4301H/E)
(4301)
T
J
Junction Temperature
1°C/W
-65°C to +150°C
+300°C
mAmp
mAmp
Volts
Volts
Volts
Volts
µAmp
µAmp
V
µAmp
nSec
nSec
µSec
µSec
µSec
µSec
µSec
µSec
Volts
nSec