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TQ2SA-4.5V-Z 参数 Datasheet PDF下载

TQ2SA-4.5V-Z图片预览
型号: TQ2SA-4.5V-Z
PDF下载: 下载PDF文件 查看货源
内容描述: 低调的表面安装继电器 [LOW-PROFILE SURFACE-MOUNT RELAY]
分类和应用: 继电器光电二极管
文件页数/大小: 5 页 / 108 K
品牌: NAIS [ NAIS(MATSUSHITA ELECTRIC WORKS) ]
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TESTING
LOW-PROFILE
SURFACE-MOUNT RELAY
TQ-SMD
RELAYS
FEATURES
14
.551
9
.354
5.6
.220
mm
inch
• Low-profile: 6 mm
.236 inch
in height comforming to EIA standards
(Tape height: max. 6.5 mm
.256 inch
)
• Tape and reel package is available as standard packing style
• Surge withstand between contacts and coil: 2,500 V
• Breakdown voltage between contacts and coil: 1,500 V
• High capacity: 2 A
• High sensitivity:
2 Form C; 140 mW power consumption (Single side stable type)
SPECIFICATIONS
Contact
Arrangement
Initial contact resistance, max.
(By voltage drop 6 V DC 1 A)
Contact material
Nominal switching capacity
(resistive load)
Rating
Max. switching power
(resistive load)
Max. switching voltage
Max. switching current
Min. switching capacity
f
1
Single side stable
Nominal
operating
power
1 coil latching
2 coil latching
Mechanical (at 180 cpm)
2 A 30 V DC
resistive
Electrical
1 A 30 V DC
(at 20 cpm) resistive
0.5 A 125 V AC
resistive
2 Form C
75 m
Gold-clad silver alloy
2 A 30 V DC,
0.5 A 125 V AC
60 W, 62.5 VA
220 V DC, 125 V AC
2A
10
µ
A 10 mV DC
140 mW (1.5 to 12 V DC)
200 mW (24 V DC)
300 mW (48 V DC)
70 mW (1.5 to 12 V DC)
100 mW (24 V DC)
140 mW (1.5 to 12 V DC)
200 mW (24 V DC)
10
8
10
5
Vibration resistance
2
×
10
5
10
5
Destructive
Conditions for oper- Ambient
ation, transport and temperature
storage*
8
(Not freez-
ing and condensing Humidity
at low temperature)
Unit weight
Initial
breakdown
voltage
Characteristics
Initial insulation resistance*
1
Between open
contacts
Between contact sets
Between contact and
coil
Between open
contacts
Initial surge (10
×
160
µ
s)
voltage
Between contacts and
coil (2
×
10
µ
s)
Temperature rise*
2
(at 20
°
C)
Operate time [Set time]*
3
(at 20
°
C)
Release time [Reset time]*
4
(at 20
°
C)
Functional*
5
Shock resistance
Destructive*
6
Functional*
7
Min. 1,000 M
(at 500 V DC)
1,000 Vrms for 1 min.
(Detection current: 10 mA)
1,500 Vrms for 1 min.
(Detection current: 10 mA)
1,500 Vrms for 1 min.
(Detection current: 10 mA)
1,500 V (FCC Part 68)
2,500 V (Bellcore)
Max. 50
°
C
Max. 4 ms (Approx. 2 ms)
[Max. 4 ms (Approx. 2 ms)]
Max. 4 ms (Approx. 1 ms)
[Max. 4 ms (Approx. 2 ms)]
Min. 750 m/s
2
{75 G}
Min. 1,000 m/s
2
{100 G}
200 m/s
2
{20G}, 10 to 55 Hz
at double amplitude of 3.3 mm
294 m/s
2
{30G}, 10 to 55 Hz
at double amplitude of 5 mm
–40
°
C to +85
°
C*
3
–40
°
F to +185
°
F
5 to 85% R.H.
Approx. 2 g
.071 oz
Expected
life (min.
operations)
Note:
f
1This value can change due to the switching frequency, environmental conditions,
and desired reliability level, therefore it is recommended to check this with the ac-
tual load.
Remarks
* Specifications will vary with foreign standards certification ratings.
*
1
Measurement at same location as "Initial breakdown voltage" section.
*
2
By resistive method, nominal voltage applied to the coil; contact carrying current:
2 A.
*
3
Nominal voltage applied to the coil, excluding contact bounce time.
*
4
Nominal voltage applied to the coil, excluding contact bounce time without diode.
*
5
Half-wave pulse of sine wave: 6 ms; detection time: 10
µ
s
*
6
Half-wave pulse of sine wave: 6 ms
*
7
Detection time: 10
µ
s
*
8
Refer to 4. Conditions for operation, transport and storage mentioned in Cautions
for use (Page 178).
140