DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3479
2SK3479-S
2SK3479-ZJ
2SK3479-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 11 mΩ MAX. (V
GS
= 10 V, I
D
= 42 A)
R
DS(on)2
= 13 mΩ MAX. (V
GS
= 4.5 V, I
D
= 42 A)
•
Low C
iss
: C
iss
= 11000 pF TYP.
•
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±20
±83
±332
125
1.5
150
–55 to +150
65
422
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263, TO-220SMD)
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15077EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2000, 2001