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NE68139R-T1 参数 Datasheet PDF下载

NE68139R-T1图片预览
型号: NE68139R-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的NPN硅高频三极管 [NECs NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 20 页 / 219 K
品牌: NEC [ NEC ]
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NE681 SERIES
NE68133
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
0.75
0.74
0.68
0.63
0.68
0.63
0.57
0.50
0.44
ANG
47
72
88
122
47
70
87
120
168
Rn/50
1.15
0.97
0.71
0.34
0.42
0.34
0.30
0.17
0.11
NE68139
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
500
800
1000
NF
OPT
(dB)
1.20
1.45
1.67
G
A
(dB)
14.10
8.42
8.37
Γ
OPT
MAG
0.78
0.75
0.68
ANG
47
72
95
Rn/50
1.28
0.84
0.56
V
CE
= 2.5 V, I
C
= 0.3 mA
500
1.21
12.45
800
1000
1500
500
800
1000
1500
2000
1.69
1.95
2.52
.92
1.20
1.35
1.71
2.00
7.72
5.96
3.12
14.52
10.57
9.29
6.53
5.53
V
CE
= 2.5 V, I
C
= 0.3 mA
V
CE
= 2.5 V, I
C
= 1 mA
500
800
1000
1500
0.90
1.10
1.26
1.70
15.71
12.30
11.66
8.85
0.63
0.56
0.53
0.49
0.57
0.45
0.39
0.37
0.35
0.43
0.26
0.16
0.20
0.31
0.53
0.71
44
72
98
145
178
44
73
99
151
-177
42
133
176
-165
-123
-101
0.43
0.26
0.20
0.12
0.07
0.25
0.19
0.16
0.09
0.07
0.17
0.14
0.09
0.14
0.48
0.90
V
CE
= 2.5 V, I
C
= 1.0 mA
2000
2.20
7.12
V
CE
= 2.5 V, I
C
= 3 mA
500
0.88
1.00
1.08
1.30
1.80
1.15
1.25
1.4
1.6
2.15
3.0
18.20
14.62
13.29
10.54
8.60
20.50
15.62
12.49
10.48
8.00
6.81
V
CE
= 2.5 V, I
C
= 3 mA
500
800
1000
1500
2000
0.86
1.00
1.08
1.25
1.40
16.37
12.41
11.07
8.61
6.99
0.54
0.51
0.46
0.36
0.35
47
67
86
128
172
0.24
0.20
0.18
0.12
0.10
800
1000
1500
2000
500
1000
1500
2000
3000
4000
V
CE
= 8 V, I
C
= 7 mA
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
30
NE68100 & NE68135
INSERTION GAIN vs.
COLLECTOR CURRENT
12
V
CE
= 8 V
f = 2 GHz
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 8 V
I
C
= 20 mA
|S
21E
|
2
NE68100
MAG NE68135
Insertion Gain, |S
21E
|
2
(dB)
25
10
f = 3 GHz
20
8
f = 4 GHz
6
15
10
NE68133
5
|S
21E
|
2
MAG
4
2
0
0.1
0.2 0.3
0.5 0.7 1
2
3
5 7 10
0
1
2
3
5
7
10
20
30
50
Frequency, f (GHz)
Collector Current, I
C
(mA)