DATA SHEET
ZENER DIODE
RD6.2Z
ZENER DIODE
200 mW ESD PROTECTION (5 V Signal Line) MINI MOLD
DESCRIPTION
Type RD6.2Z is planar type zener diode possessing an allowable
power dissipation of 200 mW.
The purpose is ESD PROTECTION of 5 V Signal Line.
PACKAGE DIMENSIONS
(Unit: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
FEATURES
• Low Terminal Capacitance (8 pF TYP.) for ESD protection
2.9±0.2
• Surge absorber on either side
0.95
0.95
0.4
+0.1
−0.05
2
3
• ESD protect circuit of 5 V Signal Line.
• Constant Voltage, Constant Current, etc.
0.3
Marking
1.1 to 1.4
0.16
+0.1
−0.06
MAXIMUM RATINGS (T
A
= 25°C)
°
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW (Total)
2 W (t = 10
µ
s, 1 pulse) Fig.5
150°C
−55°C
to +150°C
1. Cathode : K1
2. Cathode : K2 SC-59 (EIAJ)
3. Anode : A
K2
2
K1
1
A
3
ELECTRICAL CHARACTERISTICS (T
A
= 25
±
2°C)
°
Zener Voltage
Note 1
V
Z
(V)
MIN.
RD6.2Z
5.9
MAX.
6.5
I
Z
(mA)
5
Dynamic Impedance
Note 2
Z
Z
(Ω)
MAX.
60
I
Z
(mA)
5
Reverse Current
I
R
(
µ
A)
MAX.
3
V
R
(V)
5.5
Terminal Capacitance
C
t
(pF), f = 1 MHz
TYP.
8
V
R
(V)
0
Type
Number
Note 1.
Tested with pulse (40 ms)
2.
Z
Z
is measured at I
Z
given a very small A.C. signal
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14713EJ2V0DS00 (2nd edition)
(Previous No. DC-2139)
Date Published June 2000 N CP(K)
Printed in Japan
©
0 to 0.1
0.4
+0.1
−0.05
APPLICATIONS
1
1993
NEC [ NEC ]
