PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The
µ
PA800T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• Low Noise
0.65 0.65
1.3
• High Gain
|S
21e
|
2
= 6.5 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4228)
2.0±0.2
2
3
0.7
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA800T
PIN CONFIGURATION (Top View)
µ
PA800T-T1
Taping products
(3 KPCS/Reel)
6
Q
1
5
0~0.1
4
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
1
2
Q
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
10
1.5
35
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
PIN CONNECTIONS
1. Collector (Q1)
4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2)
6. Base (Q1)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3634
(O.D. No. ID-9141)
Date Published April 1995 P
Printed in Japan
©
0.15
–0
+0.1
ORDERING INFORMATION
0.9±0.1
4
5
0.2
–0
1
6
NF = 1.9 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
+0.1
X Y
1995
NEC [ NEC ]
