SEMICONDUCTOR
RoHS
1T Series
RoHS
Fig.6 Relative variation of gate trigger current (l
GT
)
and voltage(V
GT
) versus junction temperature
l
GT
,V
GT
[T
j
] / l
GT
,V
GT
[T
j
=25°C]
3.0
2.5
2.0
1.5
Fig.5 Relative variation of holding current and
latching current versus junction temperature
(typ. values)
2.5
2.0
1.5
1.0
l
H
,l
L
[T
j
] / l
H
,l
L
[T
j
=25°C]
l
GT Q1-Q2
l
GT Q3
l
GT Q4
l
L
0.5
1.0
T
j
(°C)
0.0
-50
-25
0
25
50
75
l
H
V
GT Q1-Q2-Q3-Q4
0.5
0.0
-50
100
125
-25
0
25
50
75
100
125
Fig.7 Surge peak on-state current versus
number of cycles
Fig.8 Non-repetitive surge peak on-state current
and corresponding value of l
2
t sinusoidal
pulse width
100
l
TSM
(A), l
2
t(A
2
s)
T
j
initial = 25°C
9
8
l
TSM
(A)
t=20ms
7
6
5
4
3
2
1
0
1
Repetitive
T
amb
=95°C
Non repetitive
T
j
initial=25°C
One cycle
dl/dt limitation:
20A/µs
20
l
TSM
10
Number of cycles
10
100
1000
1
0.01
t
P
(ms)
0.10
1.00
l
2
t
10.00
Fig.9 On-state characteristics (maximum values)
(l
TM
= f(V
TM
))
l
TM
(A)
10.0
Fig.10 Relative variation of critical rate of decrease
of main current versus (dV/dt)c
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
T
j
= T
j max.
1.0
T j = 25°C
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
j
= max.
V
to
= 0.95V
R
d
= 400mΩ
T
D
(dV/dt)c (V/µs)
1.0
10.0
S
A
100.0
4.0
4.5
5.0
Fig.11 Relative variation of critical rate of decrease
of main current (dl/dt) versus junction
temperature
(dl/dt)c [T
j
] / (dl/dt)c [T
j
Specified]
6
5
4
3
2
1
Fig.12 Relative variation of static dV/dt immunity
versus junction temperature (gate open)
(dV/dt)c [T
j
] / (dV/dt)c [T
j
= 125°C]
6
5
4
3
2
1
V
D
=V
R
=402V
T
j
(°C)
0
0
25
50
75
100
125
0
25
50
T
j
(°C)
75
100
125
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