SEMICONDUCTOR
RoHS
36MB
RoHS
N
ell
High Power Products
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
36MB
PARAMETER
SYMBOL
UNIT
08
Maximum repetitive peak reverse voltage
Maximum RSM voltage (non-repetitve peak reverse voltage)
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I
2
t
V
ISO
T
J
,T
STG
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
10
1000
1100
1000
35
400
12
1200
1300
1200
16
1600
1700
1600
V
V
V
A
A
800
900
800
660
2500
-55
to 150
A
2
s
V
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F = 17.5A
T
A = 25
°
C
T
A = 150
°
C
4V, 1MHz
SYMBOL
V
F
I
R
C
J
36MB
UNIT
08
10
1.1
5
500
300
12
16
V
µA
pF
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diode
Typical junction capacitance per diode
THERMAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
36MB
PARAMETER
SYMBOL
UNIT
08
10
1.4
12
16
°C/W
Typical thermal resistance
R
θJC
(1)
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
#10 screw
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