SM5010 series
Electrical Characteristics
5010AN×, BN×, DN× series
3V operation: V = 2.7 to 3.6V, V = 0V, Ta = −10 to +70°C unless otherwise noted.
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 2.7V, I = 8mA
Unit
min
2.1
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.5
10
10
10
7
IL
V
V
= V
= V
–
–
Q: Measurement cct 2, INHN = LOW,
= 3.6V
OH
DD
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×N1
5010×N2
5010×N3
5010×N4
5010×N5
–
5
–
3.5
2.5
2
Measurement cct 3, load cct 1,
INHN = open, C = 15pF, f = 30MHz
Current consumption
I
–
5
mA
DD
L
–
4
–
2
4
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
5010AN×, AK×, BN×, BK×, DN× series
5V operation: V = 4.5 to 5.5V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
DD
SS
Rating
Parameter
Symbol
Condition
Q: Measurement cct 1, V = 4.5V, I = 16mA
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
V
V
V
V
OH
DD
OH
V
Q: Measurement cct 2, V = 4.5V, I = 16mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
30
18
12
10
10
IL
V
V
= V
= V
–
–
Q: Measurement cct 2, INHN = LOW,
= 5.5V
OH
DD
Output leakage current
I
ꢀA
Z
V
DD
–
–
OL
SS
5010×N1
5010×N2
5010×N3
5010×N4
5010×N5
–
15
9
–
Measurement cct 3, load cct 1,
INHN = open, C = 50pF, f = 30MHz
–
6
L
Current consumption
I
mA
DD
–
5
–
5
Measurement cct 3, load cct 2,
INHN = open, C = 15pF, f = 30MHz
5010×K1
–
10
20
L
INHN pull-up resistance
Feedback resistance
R
Measurement cct 4
Measurement cct 5
40
80
100
200
250
500
kΩ
kΩ
UP2
R
f
Oscillator amplifier output
resistance
R
Design value
5010B××
690
820
940
Ω
D
5010A××
5010B××
5010A××
5010B××
26
20
26
20
29
22
29
22
32
24
32
24
C
G
Design value. A monitor pattern on a
wafer is tested.
Built-in capacitance
pF
C
D
SEIKO NPC CORPORATION —8
NPC [ NIPPON PRECISION CIRCUITS INC ]
