NDF7000A
Electrical Characteristics
T
C
e
25 C unless otherwise noted
Symbol
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
e
0V I
D
e
10
mA
V
DS
e
48V V
GS
e
0V
T
C
e
125 C
I
GSSF
Gate-Body Leakage Forward
V
GS
e b
15V
60
1
1
b
10
Parameter
Conditions
Min
Typ
Max
Units
V
mA
mA
nA
ON CHARACTERISTICS
V
GS(th)
r
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Drain-Source On-Voltage
V
DS
e
V
GS
I
D
e
1 mA
V
GS
e
10V I
D
e
0 5A
T
C
e
125 C
V
GS
e
10V I
D
e
500 mA
V
GS
e
4 5V I
D
e
75 mA
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
e
4 5V V
DS
t
2 V
DS(ON)
V
DS
t
2 V
DS(ON)
I
D
e
200 mA
400
100
08
21
12
2
06
0 14
600
320
3
2
35
1
0 225
V
X
X
V
V
mA
ms
V
DS(ON)
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
25V V
GS
e
0V f
e
1 0 MHz
20
11
4
60
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
off
Turn-On Time
Turn-Off Time
V
DD
e
15V I
D
e
500 mA V
GS
e
10V
R
G
e
25X R
L
e
25X
10
10
ns
ns
BODY-DRAIN DIODE RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
e
0V I
S
e
400 mA
0 88
400
2000
12
mA
mA
V
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
200
C W
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
4
NSC [ NATIONAL SEMICONDUCTOR ]
