LM10
Absolute Maximum Ratings
(Notes 1,
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM10/LM10B/LM10BL/
LM10C
Total Supply Voltage
Differential Input Voltage (Note 2)
Power Dissipation (Note 3)
Output Short-circuit Duration (Note
Storage-Temp. Range
Lead Temp. (Soldering, 10 seconds)
Metal Can
Lead Temp. (Soldering, 10
seconds) DIP
Vapor Phase (60 seconds)
Infrared (15 seconds)
300˚C
260˚C
215˚C
220˚C
45V
LM10CL
7V
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
ESD rating is to be determined.
Maximum Junction Temperature
LM10
LM10B
LM10C
150˚C
100˚C
85˚C
±
40V
±
7V
internally limited
continuous
−55˚C to +150˚C
Operating Ratings
Package Thermal Resistance
θ
JA
H Package
N Package
WM Package
θ
JC
H Package
45˚C/W
150˚C/W
87˚C/W
90˚C/W
Electrical Characteristics
T
J
=25˚C,
T
MIN
≤T
J
≤T
MAX
(Boldface type refers to limits over temperature range)
Parameter
Input offset voltage
Input offset current
Input bias current
Input resistance
Large signal voltage
gain
V
S
=
±
20V, I
OUT
=0
V
OUT
=
±
19.95V
V
S
=
±
20V, V
OUT
=
±
19.4V
I
OUT
=
±
20 mA
(
±
15 mA)
V
S
=
±
0.6V
(0.65V),
I
OUT
=
±
2 mA
V
OUT
=
±
0.4V
(
±
0.3V), V
CM
=−0.4V
Shunt gain (Note 7)
1.2V
(1.3V)
≤V
OUT
≤40V,
R
L
=1.1 kΩ
0.1 mA≤I
OUT
≤5
mA
1.5V≤V
+
≤40V,
R
L
=250Ω
0.1 mA≤I
OUT
≤20
mA
Common-mode
rejection
Supply-voltage
rejection
−20V≤V
CM
≤19.15V
(19V)
V
S
=
±
20V
−0.2V≥V
≥−39V
−
Conditions
Min
LM10/LM10B
Typ
0.3
0.25
10
250
150
120
80
50
20
1.5
0.5
14
6
8
4
93
87
90
84
96
90
2.0
2.0
106
96
102
25
33
3.0
130
400
500
Max
2.0
3.0
0.7
1.5
20
30
150
115
80
50
25
15
1.0
0.75
10
6
6
4
90
87
87
84
93
90
Min
LM10C
Typ
0.5
0.4
12
400
400
130
3.0
33
Max
4.0
5.0
2.0
3.0
30
40
Units
mV
mV
nA
nA
nA
nA
kΩ
kΩ
V/mV
V/mV
V/mV
V/mV
V/mV
V/mV
V/mV
V/mV
25
102
96
106
5.0
5.0
90
V/mV
V/mV
dB
dB
dB
dB
dB
dB
µV/˚C
pA/˚C
pA/˚C
V
+
=1.0V
(1.1V)
1.0V
(1.1V)
≤V ≤39.8V
+
V
−
=−0.2V
Offset voltage drift
Offset current drift
Bias current drift
T
C
<
100˚C
60
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