2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
March 1993
2N7000 2N7002 NDF7000A NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 400 mA DC and can deliver pulsed currents up to
2A This product is particularly suited to low voltage low
current applications such as small servo motor controls
power MOSFET gate drivers and other switching applica-
tions
Features
Y
Y
Y
Y
Y
Efficient high density cell design approaching
(3 million in
2
)
Voltage controlled small signal switch
Rugged
High saturation current
Low R
DS
(ON)
TL G 11378 – 2
TL G 11378 –1
TO-92
7000 Series
TO-236 AB
(SOT-23)
7002 Series
TL G 11378 – 3
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
s
1 MX)
Gate-Source Voltage
Drain Current Continuous
Pulsed
P
D
Total Power Dissipation
Derating above 25 C
T
J
T
STG
T
L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes
from Case for 10 Seconds
T
A
e
25 C
200
500
400
32
115
800
200
16
2N7000
2N7002
NDF7000A
60
60
g
40
NDS7002A
Units
V
V
V
400
2000
625
5
280
1500
300
24
b
65 to 150
mA
mA
mW
mW C
C
C
b
55 to 150
300
C
1995 National Semiconductor Corporation
TL G 11378
RRD-B30M115 Printed in U S A
NSC [ NATIONAL SEMICONDUCTOR ]
