Numonyx™ StrataFlash Wireless Memory
(L18)
28F128L18, 28F256L18
Datasheet
Product Features
High performance Read-While-Write/Erase
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V low-power buffered programming at
7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 128-Mbit devices
— Multiple 16-Mbit partitions: 256-Mbit
devices
— Four 16-Kword parameter blocks: top or
bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
— Status Register for partition and device status
Power
— V
CC
(core) = 1.7 V - 2.0 V
— V
CCQ
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 30 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA
(Typ) at 54 MHz
— Automatic Power Savings mode
Security
— OTP space: 64 unique factory device
identifier bits; 64 user-programmable OTP
bits; Additional 2048 user-programmable
OTP bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx
®
Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— Intel ETOX* VIII process technology (0.13
µm)
Density and Packaging
— 128- and 256-Mbit density in VF BGA
packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
Order Number: 251902-12
November 2007
NUMONYX [ NUMONYX B.V ]
