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M25P40SVMN3GB 参数 Datasheet PDF下载

M25P40SVMN3GB图片预览
型号: M25P40SVMN3GB
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 58 页 / 1175 K
品牌: NUMONYX [ NUMONYX B.V ]
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Instructions  
M25P40  
Figure 9. Read Identification (RDID) instruction sequence and data-out sequence  
S
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18  
28 29 30 31  
C
D
Instruction  
Manufacturer Identification  
Device Identification  
High Impedance  
Q
15 14 13  
MSB  
3
2
1
0
MSB  
AI06809b  
6.4  
Read Status Register (RDSR)  
The Read Status Register (RDSR) instruction allows the Status Register to be read. The  
Status Register may be read at any time, even while a Program, Erase or Write Status  
Register cycle is in progress. When one of these cycles is in progress, it is recommended to  
check the Write In Progress (WIP) bit before sending a new instruction to the device. It is  
also possible to read the Status Register continuously, as shown in Figure 10.  
Table 6.  
Status Register format  
b7  
b0  
SRWD  
0
0
BP2  
BP1  
BP0  
WEL  
WIP  
Status Register Write Protect  
Block Protect bits  
Write Enable Latch bit  
Write In Progress bit  
The status and control bits of the Status Register are as follows:  
6.4.1  
6.4.2  
WIP bit  
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status  
Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to  
0 no such cycle is in progress.  
WEL bit  
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.  
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable  
Latch is reset and no Write Status Register, Program or Erase instruction is accepted.  
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