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M28W160CB70N6F 参数 Datasheet PDF下载

M28W160CB70N6F图片预览
型号: M28W160CB70N6F
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1Mb的X16 ,引导块) 3V供应闪存 [16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储
文件页数/大小: 50 页 / 1298 K
品牌: NUMONYX [ NUMONYX B.V ]
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M28W160CT, M28W160CB  
Table 29. Device Geometry Definition  
Offset Word  
Data  
Description  
Value  
Mode  
n
27h  
0015h  
2 MByte  
Device Size = 2 in number of bytes  
28h  
29h  
0001h  
0000h  
x16  
Async.  
Flash Device Interface Code description  
2Ah  
2Bh  
0002h  
0000h  
n
4
2
Maximum number of bytes in multi-byte program or page = 2  
Number of Erase Block Regions within the device.  
It specifies the number of regions within the device containing contiguous  
Erase Blocks of the same size.  
2Ch  
0002h  
2Dh  
2Eh  
001Eh  
0000h  
Region 1 Information  
Number of identical-size erase block = 001Eh+1  
31  
64 KByte  
8
2Fh  
30h  
0000h  
0001h  
Region 1 Information  
Block size in Region 1 = 0100h * 256 byte  
31h  
32h  
0007h  
0000h  
Region 2 Information  
Number of identical-size erase block = 0007h+1  
33h  
34h  
0020h  
0000h  
Region 2 Information  
Block size in Region 2 = 0020h * 256 byte  
8 KByte  
8
2Dh  
2Eh  
0007h  
0000h  
Region 1 Information  
Number of identical-size erase block = 0007h+1  
2Fh  
30h  
0020h  
0000h  
Region 1 Information  
Block size in Region 1 = 0020h * 256 byte  
8 KByte  
31  
31h  
32h  
001Eh  
0000h  
Region 2 Information  
Number of identical-size erase block = 001Eh+1  
33h  
34h  
0000h  
0001h  
Region 2 Information  
Block size in Region 2 = 0100h * 256 byte  
64 KByte  
37/50