RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small
and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Average forward current: I
F(AV)
≤
0.2 A
Reverse voltage: V
R
≤
30 V
Low reverse current: I
R
≤
1
µA
AEC-Q101 qualified
Ultra small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
Low current rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
105
°C
T
sp
≤
135
°C
I
R
V
R
V
F
[1]
[2]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
520
0.2
0.2
1
30
600
A
A
µA
V
mV
reverse current
reverse voltage
forward voltage
V
R
= 10 V
I
F
= 0.2 A
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for
cathode 1 cm
2
.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PHILIPS [ NXP SEMICONDUCTORS ]
