Photomicrosensor (Transmissive)
EE-SV3 Series
I
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
I
Features
•
High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
•
Solder terminal models EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
•
PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
•
RoHS Compliant.
Center mark
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Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Four,
R1
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
---
20 mA
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
260°C (see note 3)
Forward current
Pulse forward
current
Reverse voltage
Four, R1
Four, 0.25
Two,
3.2±0.2 dia.
holes
Four, 1.5
2.54±0.2
Two,
3.2±0.2 dia.
holes
Four, 0.5
2.54±0.2
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Cross section AA
Cross section AA
Model
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
C
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Collector dissipation
P
C
Ambient
temperature
Operating
Storage
Internal Circuit
K
Soldering temperature
Unless otherwise specified, the
tolerances are as shown below.
A
E
Dimensions
3 mm max.
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
±0.2
±0.24
±0.29
±0.35
±0.42
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
Terminal No.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
I
Ordering Information
Description
Photomicrosensor
(transmissive)
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Model
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
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Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Detector
Light current
Dark current
Leakage current
Collector–Emitter
saturated voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
Symbol
EE-SV3(-B)
V
F
I
R
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
1.2 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
0.5 to 14 mA
1 to 28 mA
0.1 mA min.
0.5 to 14 mA
Value
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 20 mA,
V
CE
= 10 V
V
CE
= 10 V,
0
lx
---
---
0.1 V typ.,
0.4 V max.
I
F
= 20 mA,
I
L
= 0.1 mA
V
CE
= 10 V
V
CC
= 5 V,
R
L
= 100
Ω,
I
L
= 5 mA
Condition
Peak emission wavelength
λ
P
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4
µs
typ.
4
µs
typ.
224
Photomicrosensor (Transmissive)
EE-SV3
Series
OMRON [ OMRON ELECTRONICS LLC ]
