Photomicrosensor (Transmissive)
EE-SX1057
I
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
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Features
•
Compact model with a 3.6-mm-wide slot.
•
PCB mounting type.
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Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Ambient
Operating
temperature Storage
Soldering temperature
K
C
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
5V
20 mA
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
260°C (see note 3)
Internal Circuit
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
3
<
mm
≤
6
6
<
mm
≤
10
10
<
mm
≤
18
18
<
mm
≤
30
Tolerance
A
E
±
0.2
±
0.24
±
0.29
±
0.35
±
0.42
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
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Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1057
I
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
Symbol
Value
1.15 V typ., 1.5 V max.
0.01
µA
typ., 10
µA
max.
940 nm typ.
1.5 mA min., 8 mA typ., 30 mA max.
2 nA typ., 200 nA max.
---
0.4 V max.
850 nm typ.
4
µs
typ., 20
µA
max.
4
µs
typ., 20
µA
max.
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
I
F
= 15 mA, V
CE
= 2 V
V
CE
= 10 V, 0
lx
---
I
F
= 30 mA, I
L
= 1 mA
V
CE
= 10 V
V
CC
= 10 V, R
L
= 100
Ω,
I
L
= 5 mA
V
CC
= 10 V, R
L
= 100
Ω,
I
L
= 5 mA
Condition
236
Photomicrosensor (Transmissive)
EE-SX1057
OMRON [ OMRON ELECTRONICS LLC ]
